European Gallium Nitride Transistors For Space

Innovative Semiconductor Solutions

We design and manufacture high-performance semiconductor devices for power electronics applications.

Demanding missions

As the industry advances, satellite platforms and payloads require power systems to become lighter and more energy efficient.

Advanced technology

Enhanced transistors made of gallium nitride (GaN) offer superior performance over traditional silicon components.

We are creating the first European supply chain of gallium nitride transistors to be used specifically in space applications.

Made in Europe

Semiconductor Innovations

Leading the design and manufacture of high-performance semiconductor devices.

Light, efficient, space worthy

SAGaN (Space Applications GaN transistor) we are developing cutting-edge gallium nitride (GaN) transistors for the electrical power systems of upcoming space missions and services. Vehicles in space are subject to extreme conditions of radiation, vacuum-like pressure, and drastic temperature variations, which rules out conventional semiconductors. GaN transistors offer the best performance of any electrical switches in space and will enable spacecraft with reduced mass and power-consumption.

Design, manufacturing, processing, and testing

We are four companies with the knowledge and facilities to establish a start-to-finish supply chain of GaN transistors. Currently, Europe does not have the capabilities to produce these switches without relying on external countries, and so risks falling behind in the space industry. Our consortium has the know-how and technology to take GaN transistors from the design phase all the way to testing and implementation, with a goal to reach TRL 7 by the end of the project.

Optimal performance for spacecraft power systems

All the relevant expertise in one European consortium

The latest from EsGaN