A European GaN transistor supply chain
Strategic innovation for a competitive space sector
Gallium nitride (GaN) power device technology is essential for enabling power converters to withstand high radiation in space while improving power efficiency, density and frequency. As such, it is vital for space applications. In this context, the EU-funded ESGAN project aims to develop an innovative 200V enhancement-mode GaN transistor for use in power management circuits in space. The initiative will leverage the benefits of GaN, such as increased efficiency and reduced mass, while working together with a consortium of European partners across the supply chain. This collaboration aims to drive innovation and enhance European competitiveness in this field.
Technical Objective
Devices will be designed, produced, tested for radiation effects, thermal effects, structural effects and reliability performance and will be demonstrated in an application to verify the desired performance. The end goal will be to proceed with a space evaluation leading to a space qualification of the produced devices.
Revolutionizing Power for Space with GaN Technology
ESGAN is developing a 200V enhancement-mode GaN transistor (normally off) for space power management systems—offering key advantages like reduced mass, higher efficiency, and superior radiation resistance.
Supply Chain Objective
To achieve the goals of the project a strong consortium has been established in which the members cover each of the stages of the supply chain. The consortium is composed of the following companies.
European Autonomy in Space Electronics
A key goal of the ESGAN project is to eliminate reliance on non-European suppliers by establishing a robust, end-to-end European supply chain for GaN transistor technology. This is made possible through a committed consortium of leaders in materials, design, manufacturing, and system integration.
Develop a space-qualified 200V enhancement-mode GaN transistor
Test for radiation, thermal, structural, and reliability performance
Demonstrate the device in a real space application
Establish a fully European, end-to-end supply chain
Enhance European strategic independence in space technology
Collaboration by Industry Leaders
Our four companies join their complementary strengths
The ambitious EsGaN goals are possible thanks to the cumulated expertise of our members in all the involved technologies. The consortium is composed of a company devoted to space level GaN transistors.
AIXTRON, a company dedicated to the design and manufacture of equipment to grow advanced substrates for GaN transistors. SEMI ZABALA, a company dedicated to the design, test and packaging of GaN transistors and integrated circuits. X-FAB, a semiconductor foundry company that has developed and offers processing services for GaN transistors. AIRBUS DEFENCE & SPACE, are one of Europe´s leading companies dedicated to the design and manufacture of satellite equipment and systems.
The consortium covers an end to end supply chain from materials, design, processing, packaging and test through to end users.
Development Phases
Design & Fabrication of GaN devices
At the heart of ESGAN lies the development of a 200V enhancement-mode GaN transistor, also known as a normally-off device—critical for safety and reliability in power management systems. This phase includes:
Device architecture and modeling to optimize performance under extreme conditions
Material growth and substrate preparation, using advanced metal-organic chemical vapor deposition (MOCVD) techniques
Wafer processing and device fabrication in cleanroom facilities
Packaging solutions tailored for thermal management and radiation shielding in space
Testing for radiation and environmental resilience
Given the harsh environment of space, the developed devices must be thoroughly tested for robustness against:
Radiation Effects – Total Ionizing Dose (TID), Single Event Effects (SEE), and Displacement Damage
Thermal Cycling – Performance at extreme temperatures from -150°C to +125°C
Mechanical Stress – Including vibration and shock tests
Electrical Reliability – Long-term performance under voltage and current stress
Demonstration in space application
Once the GaN devices have passed lab testing, they are integrated into a functional power management system for real-world demonstration. This stage focuses on:
Building a prototype power converter using ESGAN devices
Verifying system-level benefits: increased efficiency, reduced volume and weight
Simulating or conducting testing under space-representative conditions
Preparing data to support the space qualification process
The final goal is to achieve space evaluation and qualification, allowing the technology to be deployed on actual space missions. This phase includes:
Compiling a complete reliability and qualification report
Demonstrating compliance with European Space Agency (ESA) standards
Final review by space qualification authorities
Transfer to industrialization for future commercial applications
Evaluation & Qualification for space missions
Innovative Semiconductor Solutions
We design and manufacture high-performance semiconductor devices for power electronics applications.
Demanding missions
As the industry advances, satellite platforms and payloads require power systems to become lighter and more energy efficient.
Advanced technology
Enhanced transistors made of gallium nitride (GaN) offer superior performance over traditional silicon components.
We are creating the first European supply chain of gallium nitride transistors to be used specifically in space applications.